UG2JAHR3G
DIODE GEN PURP 600V 2A DO214ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's UG2JAHR3G is a general-purpose diode designed for demanding applications. This surface mount component, housed in a DO-214AC (SMA) package, offers a maximum DC reverse voltage of 600V and an average rectified forward current of 2A. Key performance parameters include a forward voltage drop of 1.3V at 2A and a reverse leakage of 2 µA at 600V. The diode exhibits a reverse recovery time of 55 ns, classifying it as a fast recovery device. With an operating junction temperature range of -55°C to 150°C and a capacitance of 20pF at 4V and 1MHz, this component is suitable for use in power supplies, lighting, and automotive applications. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 55 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 20pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 2 A |
| Current - Reverse Leakage @ Vr | 2 µA @ 600 V |
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