TSPB5H150S
DIODE SCHOTTKY 150V 5A SMPC4.0Manufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's TSPB5H150S is a Schottky diode designed for high-performance applications. This component features a maximum DC reverse voltage (Vr) of 150 V and an average rectified forward current (Io) of 5 A. The forward voltage drop (Vf) is a nominal 840 mV at 5 A, ensuring efficient power conversion. Reverse leakage current at the maximum reverse voltage is specified at 100 µA. The device utilizes Schottky technology for fast switching speeds. The TSPB5H150S is housed in a compact TO-277, 3-PowerDFN package (SMPC4.0), suitable for surface mount assembly. Operating temperature range is -55°C to 150°C. This diode is commonly found in power supply units, voltage clamping circuits, and freewheeling applications across various industrial and consumer electronics sectors. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-277, 3-PowerDFN |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | SMPC4.0 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 840 mV @ 5 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 150 V |
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