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TSN520M60 S4G

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TSN520M60 S4G

DIODE GEN PURP 60V 20A 8DFN

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single Diodes

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Taiwan Semiconductor Corporation's TSN520M60-S4G is a general-purpose diode engineered for demanding applications. This component features a 60V reverse voltage rating and a robust 20A forward current capability, making it suitable for power management and rectification tasks. The device operates efficiently with a maximum forward voltage of 580mV at 20A. Its low reverse leakage current of 500 µA at 60V ensures minimal power dissipation in standby modes. Housed in an 8-PowerLDFN (5x6) package, the TSN520M60-S4G is designed for surface mounting, facilitating efficient PCB assembly. The diode's fast recovery speed, characterized as <= 500ns, is advantageous in high-frequency switching circuits. Its operating temperature range of -55°C to 150°C junction ensures reliability across diverse environmental conditions. This component finds application in power supplies, automotive electronics, and industrial control systems. The device is supplied on tape and reel for automated handling.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerLDFN
Mounting TypeSurface Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)20A
Supplier Device Package8-PDFN (5x6)
Operating Temperature - Junction-55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max)60 V
Voltage - Forward (Vf) (Max) @ If580 mV @ 20 A
Current - Reverse Leakage @ Vr500 µA @ 60 V

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