TSCDT12065G1
DIODE SCHOTTKY 650V 12A TO220ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's TSCDT12065G1 is a Schottky diode designed for high-voltage applications. This component features a maximum DC reverse voltage (Vr) rating of 650V and an average rectified forward current (Io) capability of 12A. Its low forward voltage drop (Vf) is 1.45V at 12A, and it exhibits a reverse leakage current of 20 µA at 650V. The diode's capacitance is rated at 55.3pF at 400V and 1MHz. Operating across a junction temperature range of -55°C to 175°C, the TSCDT12065G1 is packaged in a TO-220AC (TO-220-2) through-hole mount configuration. This device is suitable for power supply, power factor correction, and inverter applications across industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | 55.3pF @ 400V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | - |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.45 V @ 12 A |
| Current - Reverse Leakage @ Vr | 20 µA @ 650 V |
| Qualification | - |
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