TSCDF12065G1
DIODE SCHOTTKY 650V 12A ITO220ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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The Taiwan Semiconductor Corporation TSCDF12065G1 is a Schottky diode designed for high-voltage applications. Featuring a maximum DC reverse voltage of 650 V and an average rectified forward current of 12 A, this component is suitable for power supply, power factor correction, and motor control circuits. Its key specifications include a maximum forward voltage drop of 1.45 V at 12 A and a low reverse leakage current of 20 µA at 650 V. The junction capacitance is rated at 55.3 pF at 400 V and 1 MHz. This device utilizes Schottky technology for fast switching performance, indicated by its "No Recovery Time > 500mA (Io)" characteristic. The TSCDF12065G1 is housed in an ITO-220AC package for through-hole mounting, with an operating junction temperature range of -55°C to 175°C. This component is commonly found in industrial and automotive power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 Full Pack |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | 55.3pF @ 400V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | ITO-220AC |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | - |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.45 V @ 12 A |
| Current - Reverse Leakage @ Vr | 20 µA @ 650 V |
| Qualification | - |
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