TPAR3J
120NS, 3A, 600V, FAST RECOVERY RManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation TPAR3J is a 600V, 3A fast recovery diode. Featuring a reverse recovery time of 120 ns, this device is designed for applications requiring efficient switching. The forward voltage drop is specified at a maximum of 1.55V at 3A. With a junction operating temperature range of -55°C to 175°C and an average rectified output current of 3A, the TPAR3J is suitable for power supply, automotive, and industrial motor control applications. This component is supplied in a TO-277A Surface Mount package, delivered on tape and reel. The capacitance at 4V and 1MHz is 58pF, and the reverse leakage current at 600V is a maximum of 10 µA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-277, 3-PowerDFN |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 120 ns |
| Technology | Avalanche |
| Capacitance @ Vr, F | 58pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | TO-277A (SMPC) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 3 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
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