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TPAR3G

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TPAR3G

120NS, 3A, 400V, FAST RECOVERY R

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single Diodes

Quality Control: Learn More

Taiwan Semiconductor Corporation TPAR3G is a 400V, 3A fast recovery diode designed for surface mount applications. This device features a reverse recovery time (trr) of 120 ns, placing it within the fast recovery speed category. The TO-277A (SMPC) package offers a compact footprint suitable for space-constrained designs. Key electrical characteristics include an average rectified forward current (Io) of 3A and a maximum forward voltage (Vf) of 1.55V at 3A. The reverse leakage current is a low 10 µA at 400V. With a junction operating temperature range of -55°C to 175°C, the TPAR3G is suitable for demanding environments. This component finds application in power supply rectification, switching power supplies, and general-purpose high-frequency rectification.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-277, 3-PowerDFN
Mounting TypeSurface Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)120 ns
TechnologyAvalanche
Capacitance @ Vr, F58pF @ 4V, 1MHz
Current - Average Rectified (Io)3A
Supplier Device PackageTO-277A (SMPC)
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)400 V
Voltage - Forward (Vf) (Max) @ If1.55 V @ 3 A
Current - Reverse Leakage @ Vr10 µA @ 400 V

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