TPAR3D
120NS, 3A, 200V, FAST RECOVERY RManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
Quality Control: Learn More
The Taiwan Semiconductor Corporation TPAR3D is a 200V, 3A fast recovery diode featuring a reverse recovery time of 120 ns. This surface mount component, housed in a TO-277A (SMPC) package, offers a low 1.55V forward voltage at 3A and a reverse leakage of 10 µA at 200V. Its junction capacitance is rated at 58pF @ 4V, 1MHz. Designed for high-temperature operation from -55°C to 175°C, the TPAR3D is suitable for power supply rectification, general purpose switching, and automotive applications. The component is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-277, 3-PowerDFN |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 120 ns |
| Technology | Avalanche |
| Capacitance @ Vr, F | 58pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | TO-277A (SMPC) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 3 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
Request a Quote
Clients Also Buy
HS1DL M2G
DIODE GEN PURP 200V 1A SUB SMA
SS14L M2G
DIODE SCHOTTKY 40V 1A SUB SMA
SK82CHR7G
DIODE SCHOTTKY 20V 8A DO214AB
