SFT18G A1G
DIODE GEN PURP 600V 1A TS-1Manufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
Quality Control: Learn More
Taiwan Semiconductor Corporation SFT18G-A1G is a general-purpose diode designed for applications requiring robust performance. This component features a maximum DC reverse voltage (Vr) of 600 V and an average rectified forward current (Io) of 1 A. Its forward voltage drop (Vf) is rated at 1.7 V maximum at 1 A. The SFT18G-A1G offers a reverse leakage current of just 5 µA at its maximum reverse voltage. With a reverse recovery time (trr) of 35 ns, it is classified as a fast recovery diode. The diode exhibits a capacitance of 10 pF at 4 V and 1 MHz. Packaged in a TS-1 (T-18, Axial) through-hole package, it is suitable for use in industrial and power supply applications. The operating junction temperature range is -55°C to 150°C. This Taiwan Semiconductor Corporation component is supplied in Tape & Box (TB) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | T-18, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 10pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | TS-1 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
Request a Quote
Clients Also Buy
HS1DL M2G
DIODE GEN PURP 200V 1A SUB SMA
SS14L M2G
DIODE SCHOTTKY 40V 1A SUB SMA
SK82CHR7G
DIODE SCHOTTKY 20V 8A DO214AB
