SFAF804G
DIODE GEN PURP 200V 8A ITO220ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's SFAF804G is a fast recovery general-purpose diode engineered for demanding applications. This component features a maximum DC reverse voltage (Vr) of 200 V and an average rectified current (Io) of 8 A. The forward voltage drop (Vf) is specified at 950 mV maximum at 8 A. With a reverse leakage current of 10 µA at 200 V, it offers efficient operation. The device has a typical capacitance of 90 pF at 4 V and 1 MHz. Its reverse recovery time (trr) is 35 ns, classifying it within the fast recovery speed range. The SFAF804G is housed in an ITO-220AC package, facilitating through-hole mounting. Operating across a junction temperature range of -55°C to 150°C, this diode is suitable for use in power supplies, automotive systems, and industrial control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 Full Pack |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 90pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | ITO-220AC |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 8 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
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