SFAF2008GHC0G
DIODE GEN PURP 600V 20A ITO220ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
Quality Control: Learn More
Taiwan Semiconductor Corporation's SFAF2008GHC0G is a 600V, 20A general purpose diode featuring a fast recovery time of 35 ns. This component, packaged in an ITO-220AC (TO-220-2 Full Pack) through-hole configuration, offers a forward voltage drop of 1.7V at 20A and a reverse leakage current of 10 µA at 600V. With a junction operating temperature range of -55°C to 150°C and AEC-Q101 qualification, the SFAF2008GHC0G is suitable for automotive applications. Its capacitance is specified at 150pF @ 4V, 1MHz. This diode is designed for applications requiring robust performance and reliability in demanding environments.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 Full Pack |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 150pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | ITO-220AC |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 20 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
HS1DL M2G
DIODE GEN PURP 200V 1A SUB SMA
SS14L M2G
DIODE SCHOTTKY 40V 1A SUB SMA
SK82CHR7G
DIODE SCHOTTKY 20V 8A DO214AB
