SFAF1608GHC0G
DIODE GEN PURP 600V 16A ITO220ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation SFAF1608GHC0G is a general-purpose diode designed for demanding applications. This component features a maximum DC reverse voltage (Vr) of 600 V and an average rectified forward current (Io) of 16 A. With a forward voltage (Vf) of 1.7 V at 16 A, it offers efficient power handling. The diode exhibits a reverse leakage current of 10 µA at 600 V and a reverse recovery time (trr) of 35 ns, categorizing it as a fast recovery diode. The SFAF1608GHC0G is housed in an ITO-220AC package, suitable for through-hole mounting. Its operating junction temperature range is -55°C to 150°C. This device is AEC-Q101 qualified and built with standard technology, making it suitable for automotive and industrial power supply designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 Full Pack |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 100pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 16A |
| Supplier Device Package | ITO-220AC |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 16 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
| Qualification | AEC-Q101 |
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