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SF803GHC0G

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SF803GHC0G

DIODE GEN PURP 150V 8A TO220AB

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single Diodes

Quality Control: Learn More

Taiwan Semiconductor Corporation's SF803GHC0G is a general-purpose diode designed for demanding applications. This component, housed in a TO-220AB package, offers a maximum DC reverse voltage of 150V and an average rectified current handling capability of 8A. Featuring a forward voltage drop of 975mV at 8A, it exhibits a reverse leakage current of 10 µA at its maximum reverse voltage. The diode's fast recovery characteristic is specified with a typical reverse recovery time (trr) of 35 ns. With a junction operating temperature range of -55°C to 150°C and AEC-Q101 qualification, this component is suitable for automotive and other high-reliability industries. The capacitance at 4V and 1MHz is 70pF.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)35 ns
TechnologyStandard
Capacitance @ Vr, F70pF @ 4V, 1MHz
Current - Average Rectified (Io)8A
Supplier Device PackageTO-220AB
Operating Temperature - Junction-55°C ~ 150°C
GradeAutomotive
Voltage - DC Reverse (Vr) (Max)150 V
Voltage - Forward (Vf) (Max) @ If975 mV @ 8 A
Current - Reverse Leakage @ Vr10 µA @ 150 V
QualificationAEC-Q101

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