SF33GHR0G
DIODE GEN PURP 150V 3A DO201ADManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
Quality Control: Learn More
Taiwan Semiconductor Corporation SF33GHR0G is a general-purpose diode with a maximum repetitive peak reverse voltage of 150V. This through-hole component, housed in a DO-201AD axial package, offers an average rectified forward current of 3A. Its fast recovery speed, characterized by a reverse recovery time (trr) of 35 ns, makes it suitable for applications requiring efficient switching. The device exhibits a typical forward voltage drop of 950mV at 3A and a low reverse leakage current of 5 µA at 150V. With a junction operating temperature range of -55°C to 150°C and AEC-Q101 qualification, this diode is designed for automotive applications. The capacitance at 4V and 1MHz is 80pF. The component is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-201AD, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 80pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-201AD |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 3 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 150 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
HS1DL M2G
DIODE GEN PURP 200V 1A SUB SMA
SS14L M2G
DIODE SCHOTTKY 40V 1A SUB SMA
SK82CHR7G
DIODE SCHOTTKY 20V 8A DO214AB
