SF2008G
DIODE GEN PURP 600V 20A TO220ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's SF2008G is a general-purpose diode featuring a 600 V reverse voltage rating and an average rectified forward current capacity of 20 A. This through-hole component, housed in a TO-220AB package, offers a fast recovery time of 35 ns, suitable for applications requiring efficient rectification. The diode exhibits a low reverse leakage current of 5 µA at its maximum reverse voltage and a forward voltage drop of 1.7 V at 10 A. With an operating junction temperature range of -55°C to 150°C, this component is utilized in various power supply, switching, and industrial control applications. The device is supplied in tube packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 80pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | TO-220AB |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
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