S8JCHM6G
DIODE GEN PURP 600V 8A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation S8JCHM6G is a general-purpose, standard recovery diode designed for high-voltage applications. This component features a maximum DC reverse voltage rating of 600 V and an average rectified forward current capacity of 8 A. The forward voltage drop at 8 A is a maximum of 985 mV. With a reverse leakage current of 10 µA at 600 V, the S8JCHM6G offers efficient operation. Its capacitance at 4 V and 1 MHz is 48 pF. The diode is housed in a DO-214AB (SMC) surface-mount package and operates across a junction temperature range of -55°C to 150°C. Qualified to AEC-Q101 and carrying an automotive grade, this diode is suitable for use in automotive electronics and power supply applications requiring robust performance and reliability. The S8JCHM6G is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | 48pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 985 mV @ 8 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
| Qualification | AEC-Q101 |
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