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S5M R7G

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S5M R7G

DIODE GEN PURP 1KV 5A DO214AB

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single Diodes

Quality Control: Learn More

Taiwan Semiconductor Corporation S5M-R7G is a standard recovery diode designed for general-purpose rectification. This component offers a maximum repetitive reverse voltage (Vr) of 1000 V and a continuous average forward current (Io) of 5 A. The forward voltage (Vf) is specified at a maximum of 1.15 V at 5 A. It exhibits a low reverse leakage current of 10 µA at 1000 V. The diode features a reverse recovery time (trr) of 1.5 µs. With a junction capacitance of 60 pF at 4 V and 1 MHz, it is suitable for applications requiring efficient power conversion. The S5M-R7G is packaged in a DO-214AB (SMC) surface-mount case and operates across a wide junction temperature range of -55°C to 150°C. This device is commonly utilized in power supplies, voltage multipliers, and general rectification circuits across various industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDO-214AB, SMC
Mounting TypeSurface Mount
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)1.5 µs
TechnologyStandard
Capacitance @ Vr, F60pF @ 4V, 1MHz
Current - Average Rectified (Io)5A
Supplier Device PackageDO-214AB (SMC)
Operating Temperature - Junction-55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max)1000 V
Voltage - Forward (Vf) (Max) @ If1.15 V @ 5 A
Current - Reverse Leakage @ Vr10 µA @ 1000 V

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