S5J M6G
DIODE GEN PURP 600V 5A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's S5J-M6G is a general-purpose diode designed for high-voltage applications. This component features a maximum DC reverse voltage (Vr) of 600 V and an average rectified forward current (Io) of 5 A. The forward voltage drop (Vf) at 5 A is a maximum of 1.15 V. The diode exhibits a low reverse leakage current of 10 µA at 600 V and a reverse recovery time (trr) of 1.5 µs, indicating standard recovery characteristics. With a capacitance of 60 pF at 4 V and 1 MHz, it is suitable for applications requiring efficient rectification. The S5J-M6G is housed in a DO-214AB (SMC) surface-mount package, facilitating integration into automated assembly processes. Operating temperature range is from -55°C to 150°C. This component is widely utilized in power supply circuits, inverters, and general rectification within the industrial and consumer electronics sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 5 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
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