S4M R7G
DIODE GEN PURP 1KV 4A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation S4M-R7G is a general-purpose diode designed for demanding applications. This component features a 1000 V DC reverse voltage (Vr) capability and a 4 A average rectified forward current (Io). Its fast recovery speed, characterized as <= 500ns and > 200mA (Io), ensures efficient operation in power supply and power management circuits. The diode exhibits a forward voltage (Vf) of 1.15 V at 4 A and a low reverse leakage current of 10 µA at its maximum reverse voltage.
The S4M-R7G is housed in a DO-214AB (SMC) surface mount package, supplied on tape and reel for automated assembly. Its operating junction temperature ranges from -55°C to 150°C, making it suitable for rugged industrial and automotive environments. This device is commonly utilized in power rectification, voltage clamping, and general-purpose switching applications across various industries. The capacitance at 4V and 1MHz is rated at 60pF.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 4 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1000 V |
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