S4M R6
DIODE GEN PURP 1KV 4A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation S4M-R6 is a general-purpose diode featuring a 1000V reverse voltage rating and a 4A average rectified forward current (Io). This device utilizes standard recovery technology with a reverse recovery time (trr) of 1.5µs. It exhibits a maximum forward voltage (Vf) of 1.15V at 4A and a low reverse leakage current of 10µA at 1000V. The diode has a junction capacitance of 60pF at 4V and 1MHz. Housed in a DO-214AB (SMC) surface-mount package, the S4M-R6 operates across a junction temperature range of -55°C to 150°C. This component is suitable for applications in power supplies, automotive electronics, and industrial control systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 4 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1000 V |
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