S4K M6G
DIODE GEN PURP 800V 4A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's S4K-M6G is a general-purpose diode engineered for robust performance in demanding applications. This standard recovery diode, with a maximum DC reverse voltage of 800 V and an average rectified forward current of 4 A, is housed in a compact DO-214AB (SMC) surface-mount package. Key electrical characteristics include a forward voltage drop of 1.15 V at 4 A and a reverse leakage current of 100 µA at 800 V. The component exhibits a capacitance of 60 pF at 4 V and a reverse recovery time of 1.5 µs. Operating across a wide junction temperature range of -55°C to 150°C, this diode is suitable for use in power supplies, inverters, and industrial control systems. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 4 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 800 V |
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