S4J R6
DIODE GEN PURP 600V 4A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation S4J-R6 is a general-purpose silicon rectifier diode. This component features a 600V reverse voltage rating and a 4A average forward current capability. The diode exhibits a maximum forward voltage of 1.15V at 4A and a reverse leakage current of 10 µA at 600V. With a standard recovery speed exceeding 500ns for currents over 200mA, and a typical junction capacitance of 60pF at 4V and 1MHz, the S4J-R6 is suitable for power supply rectification and general switching applications. The device is housed in a DO-214AB (SMC) surface-mount package and operates across a temperature range of -55°C to 150°C. This component is commonly found in industrial power systems and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 4 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
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