S4B V6G
DIODE GEN PURP 100V 4A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation S4B-V6G is a general-purpose diode designed for demanding applications. This component offers a 100V reverse voltage capability and a 4A average rectified forward current. The S4B-V6G is housed in a DO-214AB (SMC) surface-mount package, facilitating efficient integration into PCB designs. Its standard recovery speed, characterized by a reverse recovery time of 1.5 µs, makes it suitable for power rectification and switching applications across various industries. Key electrical parameters include a low reverse leakage current of 100 µA at its maximum reverse voltage and a capacitance of 60pF at 4V and 1MHz. The operating junction temperature range is -55°C to 150°C. This component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Current - Reverse Leakage @ Vr | 100 µA @ 100 V |
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