S3MHR7G
DIODE GEN PURP 3A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation S3MHR7G is a general-purpose diode designed for demanding applications requiring high voltage and current handling. This AEC-Q101 qualified component features a 1000 V reverse voltage (Vr) and a 3 A average rectified forward current (Io). The forward voltage (Vf) is a maximum of 1.15 V at 3 A, with a low reverse leakage current of 5 µA at 1000 V. Its standard recovery speed, with a reverse recovery time (trr) of 1.5 µs, makes it suitable for various power supply and rectification circuits. The diode's junction capacitance is rated at 30 pF @ 4V, 1MHz. Packaged in a DO-214AB (SMC) surface mount case, the S3MHR7G operates across a wide temperature range of -55°C to 150°C. This component is commonly utilized in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 30pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 3 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 1000 V |
| Qualification | AEC-Q101 |
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