S3MHM6G
DIODE GEN PURP 3A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
Quality Control: Learn More
Taiwan Semiconductor Corporation S3MHM6G is a general-purpose diode with a maximum reverse voltage of 1000V and an average rectified current of 3A. This device features a forward voltage drop of 1.15V at 3A and a reverse leakage current of 5µA at 1000V. The S3MHM6G has a capacitance of 30pF at 4V and 1MHz, and a reverse recovery time of 1.5µs. Designed for standard recovery applications with a speed rating of >500ns, it is packaged in a DO-214AB (SMC) surface mount configuration. Qualified to AEC-Q101 and manufactured to automotive grade standards, this component is suitable for use in automotive and industrial applications requiring robust power handling and high voltage capabilities. The operating junction temperature range is -55°C to 150°C. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 30pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 3 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 1000 V |
| Qualification | AEC-Q101 |
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