S3KHM6G
DIODE GEN PURP 800V 3A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's S3KHM6G is a general-purpose diode with a maximum DC reverse voltage of 800V. This surface mount device, housed in a DO-214AB (SMC) package, offers an average rectified current of 3A. It features a forward voltage of 1.15V at 3A and a reverse leakage current of 5 µA at 800V. The diode exhibits a capacitance of 30pF at 4V and 1MHz. With a standard recovery time (trr) of 1.5 µs, it is classified under Standard Recovery (>500ns, >200mA). This component is qualified to AEC-Q101, indicating its suitability for the automotive sector. The operating junction temperature ranges from -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 30pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 3 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 800 V |
| Qualification | AEC-Q101 |
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