S3JHM6G
DIODE GEN PURP 600V 3A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation S3JHM6G is a general-purpose diode designed for demanding applications. This standard recovery diode features a 600V reverse voltage (Vr) and a 3A average rectified forward current (Io). The component is housed in a DO-214AB (SMC) surface-mount package, offering convenient integration into printed circuit boards. Key electrical characteristics include a forward voltage (Vf) of 1.15V at 3A and a low reverse leakage current of 5 µA at 600V. Its capacitance is specified at 30pF at 4V and 1MHz. With a reverse recovery time (trr) of 1.5 µs, this diode is suitable for use in automotive power management systems and other high-reliability electronic equipment. The S3JHM6G meets AEC-Q101 qualification standards and operates within a junction temperature range of -55°C to 150°C. It is supplied on tape and reel for efficient automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 30pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 3 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
| Qualification | AEC-Q101 |
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