S3DHM6G
DIODE GEN PURP 200V 3A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
Quality Control: Learn More
Taiwan Semiconductor Corporation S3DHM6G is a general-purpose diode with a 200V reverse voltage rating and a 3A average rectified forward current. This surface-mount component, housed in a DO-214AB (SMC) package, features a low forward voltage of 1.15V at 3A and a reverse leakage current of 5µA at 200V. Its standard recovery speed is characterized by a reverse recovery time (trr) of 1.5µs. The diode has a junction capacitance of 30pF at 4V and 1MHz. Qualified to AEC-Q101 automotive standards, it operates across a temperature range of -55°C to 150°C. This component is suitable for applications in the automotive sector. The S3DHM6G is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 30pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 3 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 200 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
HS1DL M2G
DIODE GEN PURP 200V 1A SUB SMA
TST30L120CW
DIODE SCHOTTKY 120V 15A TO220AB
SK29AHM2G
DIODE SCHOTTKY 90V 2A DO214AC
