S3BHM6G
DIODE GEN PURP 100V 3A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation S3BHM6G is a general-purpose diode featuring a 100V reverse voltage rating and a 3A average rectified forward current. This component, packaged in a DO-214AB (SMC) surface mount configuration, offers a forward voltage drop of 1.15V at 3A. Its low reverse leakage is specified at 5 µA at 100V. The diode exhibits a reverse recovery time (trr) of 1.5 µs and is categorized as Standard Recovery (>500ns, >200mA). With an operating junction temperature range of -55°C to 150°C, the S3BHM6G is qualified to AEC-Q101 and carries an Automotive grade, making it suitable for applications in the automotive industry. Its capacitance is rated at 30pF at 4V and 1MHz.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 30pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 3 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V |
| Qualification | AEC-Q101 |
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