S3B M6G
DIODE GEN PURP 100V 3A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation S3B-M6G is a general-purpose diode designed for high-volume manufacturing applications. This component features a 100V reverse voltage rating (Vr) and a 3A average rectified forward current (Io). The forward voltage drop (Vf) is a maximum of 1.15V at 3A. Exhibiting a reverse leakage current of 5 µA at 100V, this diode utilizes standard recovery technology with a typical reverse recovery time (trr) of 1.5 µs. Its capacitance is rated at 30pF at 4V and 1MHz. The S3B-M6G is housed in a DO-214AB (SMC) surface-mount package, supplied on tape and reel. Operating junction temperatures range from -55°C to 150°C. This component is commonly found in power supply circuits, rectification, and general-purpose switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 30pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 3 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V |
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