S3ABHM4G
DIODE GEN PURP 50V 3A DO214AAManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation S3ABHM4G is a general-purpose diode with a 50V reverse voltage rating and an average rectified current of 3A. This AEC-Q101 qualified component is housed in a DO-214AA (SMB) surface mount package, suitable for demanding automotive applications. Key specifications include a forward voltage drop of 1.15V at 3A, a reverse leakage current of 10 µA at 50V, and a typical capacitance of 40pF @ 4V, 1MHz. The diode features a standard recovery speed with a reverse recovery time (trr) of 1.5 µs. Operating over a junction temperature range of -55°C to 150°C, this diode is ideal for power supply rectification and general switching applications. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AA, SMB |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 40pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 3 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 50 V |
| Qualification | AEC-Q101 |
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