S2MHR5G
DIODE GEN PURP 2A DO214AAManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation S2MHR5G is a general-purpose diode designed for demanding applications. This standard recovery diode features a maximum repetitive peak reverse voltage of 1000 V and an average rectified forward current capability of 2 A. The forward voltage drop is specified at a maximum of 1.15 V at 2 A. With a reverse leakage current of just 1 µA at 1000 V, it offers excellent blocking characteristics. The device exhibits a reverse recovery time of 1.5 µs and a junction capacitance of 30 pF at 4 V and 1 MHz. Packaged in a DO-214AA (SMB) surface-mount configuration and supplied on tape and reel, the S2MHR5G meets AEC-Q101 qualification, making it suitable for automotive and industrial environments. It operates across a junction temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AA, SMB |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 30pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 2 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 1000 V |
| Qualification | AEC-Q101 |
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