S2BHM4G
DIODE GEN PURP 100V 2A DO214AAManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
Quality Control: Learn More
Taiwan Semiconductor Corporation S2BHM4G is a general-purpose diode designed for demanding applications. This surface-mount component, housed in a DO-214AA (SMB) package, offers a maximum DC reverse voltage of 100V and an average rectified forward current handling capability of 2A. It features a standard recovery speed with a typical reverse recovery time (trr) of 1.5 µs. The forward voltage drop is rated at a maximum of 1.15V at 2A. Reverse leakage current at the maximum reverse voltage is a low 1 µA. With a junction operating temperature range of -55°C to 150°C and AEC-Q101 qualification, this diode is suitable for automotive applications. Its capacitance at 4V and 1MHz is 30pF. Supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AA, SMB |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 30pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 2 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 100 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
HS1DL M2G
DIODE GEN PURP 200V 1A SUB SMA
SS14L M2G
DIODE SCHOTTKY 40V 1A SUB SMA
SK82CHR7G
DIODE SCHOTTKY 20V 8A DO214AB
