S1M-JR2
DIODE GEN PURP 1KV 1A DO214ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation S1M-JR2 is a general-purpose diode featuring a 1000 V reverse voltage (Vr) and 1 A average rectified current (Io). This component utilizes standard recovery technology and has a typical reverse recovery time (trr) of 1.5 µs. The forward voltage (Vf) is a maximum of 1.1 V at 1 A. With a low reverse leakage current of 1 µA at 1000 V and a capacitance of 12 pF at 4 V and 1 MHz, the S1M-JR2 is suitable for applications requiring reliable rectification. It is housed in a DO-214AC (SMA) surface mount package and operates within a junction temperature range of -55°C to 175°C. This diode is commonly found in power supplies, switching power supplies, and general industrial applications. The S1M-JR2 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 12pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 1000 V |
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