S1KBHR5G
DIODE GEN PURP 800V 1A DO214AAManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
Quality Control: Learn More
Taiwan Semiconductor Corporation's S1KBHR5G is a general-purpose diode designed for demanding applications. This diode features a maximum DC reverse voltage (Vr) of 800 V and an average rectified current (Io) of 1 A. The forward voltage (Vf) is a maximum of 1.1 V at 1 A. With a reverse leakage current of just 5 µA at 800 V, it offers efficient operation. The component is housed in a DO-214AA (SMB) surface mount package and has a junction operating temperature range of -55°C to 150°C. This diode meets AEC-Q101 qualification standards, making it suitable for automotive, industrial, and power supply applications. The capacitance at 4V and 1MHz is 12pF, and it utilizes standard recovery technology with a speed greater than 500ns. The S1KBHR5G is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AA, SMB |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | 12pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 800 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
HS1DL M2G
DIODE GEN PURP 200V 1A SUB SMA
SS14L M2G
DIODE SCHOTTKY 40V 1A SUB SMA
SK82CHR7G
DIODE SCHOTTKY 20V 8A DO214AB
