S1K R3G
DIODE GEN PURP 800V 1A DO214ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's S1K-R3G is a general-purpose diode designed for demanding applications. This component features a maximum repetitive reverse voltage of 800 V and an average forward rectified current of 1 A. With a forward voltage drop of 1.1 V at 1 A and a reverse leakage current of only 1 µA at 800 V, it offers efficient rectification. The device utilizes standard recovery technology with a typical reverse recovery time of 1.5 µs. Its low junction capacitance of 12 pF at 4V and 1MHz makes it suitable for various circuit designs. The S1K-R3G is housed in a DO-214AC (SMA) surface-mount package, ideal for automated assembly. Operating across a wide junction temperature range of -55°C to 175°C, this diode finds application in power supplies, consumer electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 12pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 800 V |
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