S1JMHRSG
DIODE GEN PURP 600V 1A MICRO SMAManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation S1JMHRSG is a general-purpose diode designed for demanding applications. Featuring a 600V reverse voltage rating and a 1A average rectified current capacity, this component excels in power supply rectification and voltage clamping. The Micro SMA package (2-SMD, Flat Leads) facilitates efficient surface mounting, delivering a compact solution for high-density board designs. With a low forward voltage of 1.1V at 1A and a reverse leakage of just 1 µA at 600V, the S1JMHRSG offers optimized performance and reduced power dissipation. Its operating temperature range of -55°C to 175°C and a reverse recovery time of 780 ns make it suitable for use in automotive, industrial, and telecommunications equipment where reliability and efficiency are paramount.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 2-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 780 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 5pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | Micro SMA |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 600 V |
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