S1JBHR5G
DIODE GEN PURP 600V 1A DO214AAManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's S1JBHR5G is a general-purpose diode designed for high-voltage applications. This standard recovery diode features a reverse voltage rating of 600 V and a forward current of 1 A, with a forward voltage drop of 1.1 V at 1 A. The device exhibits a low leakage current of 5 µA at 600 V and a junction capacitance of 12 pF at 4 V and 1 MHz. Packaged in a DO-214AA (SMB) surface-mount case, the S1JBHR5G operates across a temperature range of -55°C to 150°C. Qualified to AEC-Q101, this component is suited for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AA, SMB |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | 12pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
| Qualification | AEC-Q101 |
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