S1DHR3G
DIODE GEN PURP 200V 1A DO214ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation S1DHR3G is a general-purpose diode designed for demanding applications, including automotive systems. This surface-mount device, housed in a DO-214AC (SMA) package, offers a repetitive peak reverse voltage of 200V and a continuous average rectified forward current of 1A. The diode exhibits a low forward voltage drop of 1.1V at 1A and a reverse leakage current of 1µA at its maximum reverse voltage. With a junction temperature range of -55°C to 175°C and AEC-Q101 qualification, the S1DHR3G is suitable for environments requiring robust component performance. Its standard recovery speed, with a reverse recovery time of 1.5µs, makes it a reliable choice for power rectification and switching applications. The component is supplied on tape and reel for efficient automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 12pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 200 V |
| Qualification | AEC-Q101 |
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