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S1BHR3G

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S1BHR3G

DIODE GEN PURP 100V 1A DO214AC

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single Diodes

Quality Control: Learn More

Taiwan Semiconductor Corporation S1BHR3G is a general-purpose diode designed for 100V reverse voltage and 1A forward current applications. This AEC-Q101 qualified component features a standard recovery speed exceeding 500ns at 200mA (Io). The forward voltage drop is specified at a maximum of 1.1V at 1A. Reverse leakage current is a minimal 1 µA at the maximum reverse voltage of 100V. The device exhibits a capacitance of 12pF at 4V and 1MHz. The S1BHR3G is housed in a DO-214AC (SMA) surface mount package and is supplied on tape and reel. Its operating junction temperature range is -55°C to 175°C, making it suitable for automotive applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDO-214AC, SMA
Mounting TypeSurface Mount
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)1.5 µs
TechnologyStandard
Capacitance @ Vr, F12pF @ 4V, 1MHz
Current - Average Rectified (Io)1A
Supplier Device PackageDO-214AC (SMA)
Operating Temperature - Junction-55°C ~ 175°C
GradeAutomotive
Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max) @ If1.1 V @ 1 A
Current - Reverse Leakage @ Vr1 µA @ 100 V
QualificationAEC-Q101

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