S1AHR3G
DIODE GEN PURP 50V 1A DO214ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation S1AHR3G is a general-purpose diode manufactured by Taiwan Semiconductor Corporation. This component, utilizing standard recovery technology, offers a maximum DC reverse voltage of 50V and an average rectified forward current capability of 1A. The forward voltage drop is specified at 1.1V maximum at 1A. Reverse leakage current is a low 1 µA at 50V. The device features a capacitance of 12pF at 4V and 1MHz. Fabricated for automotive applications, it meets AEC-Q101 qualification standards. The S1AHR3G is supplied in a DO-214AC (SMA) surface mount package, delivered on tape and reel. Operating junction temperature ranges from -55°C to 175°C. Its typical application areas include automotive electronics and general rectification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 12pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 50 V |
| Qualification | AEC-Q101 |
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