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S12MCHV7G

DIODE GEN PURP 1KV 12A DO214AB

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single Diodes

Quality Control: Learn More

Taiwan Semiconductor Corporation S12MCHV7G is a general-purpose diode engineered for high-voltage applications. This AEC-Q101 qualified component offers a 1000 V reverse voltage rating and a 12 A average rectified current capability. The S12MCHV7G features a forward voltage drop of 1.1 V at 12 A and a reverse leakage current of 1 µA at its maximum reverse voltage. With a junction operating temperature range of -55°C to 150°C, it is suitable for demanding automotive environments. The device is packaged in a DO-214AB (SMC) case and supplied on tape and reel. Its standard recovery time exceeds 500 ns for currents greater than 200 mA.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDO-214AB, SMC
SpeedStandard Recovery >500ns, > 200mA (Io)
TechnologyStandard
Capacitance @ Vr, F78pF @ 4V, 1MHz
Current - Average Rectified (Io)12A
Supplier Device PackageDO-214AB (SMC)
Operating Temperature - Junction-55°C ~ 150°C
GradeAutomotive
Voltage - DC Reverse (Vr) (Max)1000 V
Voltage - Forward (Vf) (Max) @ If1.1 V @ 12 A
Current - Reverse Leakage @ Vr1 µA @ 1000 V
QualificationAEC-Q101

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