S12MCHM6G
DIODE GEN PURP 12A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
Quality Control: Learn More
The Taiwan Semiconductor Corporation S12MCHM6G is a general-purpose diode with a maximum DC reverse voltage of 1000 V and an average rectified current (Io) of 12 A. This device features a forward voltage (Vf) of 1.1 V at 12 A and a reverse leakage current (Ir) of 1 µA at 1000 V. The capacitance at 4V and 1MHz is 78 pF. Designed for standard recovery with a speed greater than 500 ns at >200 mA, the S12MCHM6G is housed in a DO-214AB (SMC) surface mount package. Operating from -55°C to 150°C, this component meets AEC-Q101 qualification standards, making it suitable for automotive applications. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | 78pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 12 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 1000 V |
| Qualification | AEC-Q101 |
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