S12KC M6G
DIODE GEN PURP 800V 12A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation S12KC-M6G is a general-purpose diode with a maximum reverse voltage of 800 V and an average rectified current of 12 A. This component features a standard recovery time exceeding 500 ns for currents greater than 200 mA. The forward voltage drop is rated at a maximum of 1.1 V at 12 A. Its low reverse leakage current is 1 µA at 800 V, with a junction capacitance of 78 pF at 4 V and 1 MHz. The device is housed in a DO-214AB (SMC) package for surface mounting and operates across a temperature range of -55°C to 150°C. This component is typically utilized in power supply circuits and general rectification applications. The S12KC-M6G is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | 78pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 12 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 800 V |
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