S10MCHM6G
DIODE GEN PURP 10A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's S10MCHM6G is a general-purpose rectifier diode with a 10A average rectified current (Io) capability. This device features a 1000V DC reverse voltage (Vr) rating and a forward voltage drop (Vf) of 1.1V at 10A. Its standard recovery time exceeds 500ns. The S10MCHM6G is housed in a DO-214AB (SMC) surface-mount package, ideal for applications requiring efficient heat dissipation. With a junction operating temperature range of -55°C to 150°C and AEC-Q101 qualification, this diode is suitable for demanding automotive and industrial environments. The device exhibits a low reverse leakage current of 1 µA at 1000V and a capacitance of 60pF at 4V and 1MHz. Packaging is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 10 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 1000 V |
| Qualification | AEC-Q101 |
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