S10KC R7G
DIODE GEN PURP 800V 10A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation S10KC-R7G is a general-purpose diode designed for high-voltage rectification applications. This component features a 800V reverse voltage (Vr) rating and a 10A average rectified forward current (Io). Its fast recovery time, specified at less than 500ns for currents greater than 200mA, makes it suitable for power supply circuits and switching applications. The diode exhibits a maximum forward voltage (Vf) of 1.1V at 10A and a low reverse leakage current of 1 µA at 800V. Packaged in a DO-214AB (SMC) surface-mount case and supplied on tape and reel, the S10KC-R7G operates within a junction temperature range of -55°C to 150°C. This diode is commonly utilized in industrial power systems, automotive electronics, and consumer goods requiring robust rectification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 10 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 800 V |
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