S10KC M6G
DIODE GEN PURP 800V 10A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation S10KC-M6G is a general-purpose diode designed for demanding applications requiring robust performance. This surface mount component, housed in a DO-214AB (SMC) package, offers a maximum DC reverse voltage of 800 V and an average rectified forward current capability of 10 A. Key specifications include a forward voltage drop of 1.1 V at 10 A, a reverse leakage current of 1 µA at 800 V, and a junction operating temperature range of -55°C to 150°C. The diode features a capacitance of 60 pF at 4 V and 1 MHz. Its fast recovery time, defined as less than 500 ns for currents greater than 200 mA, makes it suitable for power supply rectification and general switching applications in industries such as industrial automation and telecommunications. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 10 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 800 V |
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