RS3MHM6G
DIODE GEN PURP 3A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation RS3MHM6G is a general-purpose diode with a 1000 V reverse voltage rating and a 3 A average rectified current capability. This device features a fast recovery time of 500 ns, suitable for applications requiring efficient switching. The forward voltage drop is a maximum of 1.3 V at 3 A. Designed for surface mounting in the DO-214AB (SMC) package, it operates across a temperature range of -55°C to 150°C. The component exhibits a low reverse leakage current of 10 µA at its maximum reverse voltage. This diode is qualified to AEC-Q101 standards, making it suitable for automotive applications. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 500 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 3 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1000 V |
| Qualification | AEC-Q101 |
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