Home

Products

Discrete Semiconductor Products

Diodes

Rectifiers

Single Diodes

RS3BHM6G

Banner
productimage

RS3BHM6G

DIODE GEN PURP 100V 3A DO214AB

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single Diodes

Quality Control: Learn More

Taiwan Semiconductor Corporation RS3BHM6G is a General Purpose Diode featuring a 100V reverse voltage and a 3A forward current. This surface mount component, designated by the DO-214AB (SMC) package, offers a maximum forward voltage of 1.3V at 3A. With a reverse leakage of 10 µA at 100V and a reverse recovery time of 150 ns, it is classified as a fast recovery diode. The device operates within a junction temperature range of -55°C to 150°C and meets AEC-Q101 qualification standards, making it suitable for automotive applications. The component is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDO-214AB, SMC
Mounting TypeSurface Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)150 ns
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)3A
Supplier Device PackageDO-214AB (SMC)
Operating Temperature - Junction-55°C ~ 150°C
GradeAutomotive
Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max) @ If1.3 V @ 3 A
Current - Reverse Leakage @ Vr10 µA @ 100 V
QualificationAEC-Q101

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
TST20U60C

DIODE SCHOTTKY 60V 10A TO220AB

product image
S4M M6G

DIODE GEN PURP 4A DO214AB

product image
UG12JH

20NS, 12A, 600V, ULTRA FAST RECO