MUR360S R7G
DIODE GEN PURP 600V 3A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's MUR360S-R7G is a general-purpose diode designed for demanding applications. This surface-mount component, housed in a DO-214AB (SMC) package, offers a repetitive peak reverse voltage of 600 V and an average rectified forward current capability of 3 A. The diode exhibits a low reverse leakage current of 10 µA at its maximum reverse voltage. Featuring a forward voltage drop of 1.25 V at 3 A and a reverse recovery time of 50 ns, it is classified as a fast recovery diode. Operating across a wide junction temperature range of -55°C to 175°C, this Taiwan Semiconductor Corporation diode is suitable for power supply, automotive, and industrial control systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 3 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
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